DocumentCode
3557615
Title
Critical issues in vapor deposition of Cu(InGa)Se2 on polymer web: source spitting and back contact cracking
Author
Eser, Erten ; Fields, Shannon ; Hanket, G. ; Birkmire, Robert W. ; Doody, Jeffrey
Author_Institution
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
fYear
2005
fDate
3-7 Jan. 2005
Firstpage
515
Lastpage
518
Abstract
This paper presents solutions to two critical problems encountered during the physical vapor deposition of Cu(InGa)Se2 films on Mo coated polymer web in a roll-to-roll reactor. Spitting out of the Cu source, resulting in Cu-rich particles imbedded in the growing films and causing shorts in the devices, has been eliminated by changing the shape of the effusion nozzles. Sources having conical nozzles eliminated the spitting by reducing the temperature gradient along the nozzle. Heavy cracking of the Mo back contact film during the deposition of the Cu(InGa)Se2 films has been found to be related to the reaction of Mo with Se in the reactor. Introducing an appropriate amount of oxygen into the Mo film eliminated the cracking by reducing the reactivity of the film to Se.
Keywords
copper compounds; cracks; fracture mechanics; gallium compounds; indium compounds; semiconductor thin films; ternary semiconductors; vapour deposited coatings; vapour deposition; Cu(InGa)Se2 films; Cu(InGa)Se2-Mo; Cu-rich particles; Mo coated polymer web; back contact cracking; effusion nozzles; film reactivity; polymer web; roll-to-roll reactor; source spitting; temperature gradient; vapor deposition; Boats; Chemical vapor deposition; Geometry; Heat sinks; Inductors; Polymer films; Shape; Substrates; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488183
Filename
1488183
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