DocumentCode :
3557615
Title :
Critical issues in vapor deposition of Cu(InGa)Se2 on polymer web: source spitting and back contact cracking
Author :
Eser, Erten ; Fields, Shannon ; Hanket, G. ; Birkmire, Robert W. ; Doody, Jeffrey
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
fYear :
2005
fDate :
3-7 Jan. 2005
Firstpage :
515
Lastpage :
518
Abstract :
This paper presents solutions to two critical problems encountered during the physical vapor deposition of Cu(InGa)Se2 films on Mo coated polymer web in a roll-to-roll reactor. Spitting out of the Cu source, resulting in Cu-rich particles imbedded in the growing films and causing shorts in the devices, has been eliminated by changing the shape of the effusion nozzles. Sources having conical nozzles eliminated the spitting by reducing the temperature gradient along the nozzle. Heavy cracking of the Mo back contact film during the deposition of the Cu(InGa)Se2 films has been found to be related to the reaction of Mo with Se in the reactor. Introducing an appropriate amount of oxygen into the Mo film eliminated the cracking by reducing the reactivity of the film to Se.
Keywords :
copper compounds; cracks; fracture mechanics; gallium compounds; indium compounds; semiconductor thin films; ternary semiconductors; vapour deposited coatings; vapour deposition; Cu(InGa)Se2 films; Cu(InGa)Se2-Mo; Cu-rich particles; Mo coated polymer web; back contact cracking; effusion nozzles; film reactivity; polymer web; roll-to-roll reactor; source spitting; temperature gradient; vapor deposition; Boats; Chemical vapor deposition; Geometry; Heat sinks; Inductors; Polymer films; Shape; Substrates; Temperature; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488183
Filename :
1488183
Link To Document :
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