Title :
Lattice-mismatched approaches for high-performance, III-V photovoltaic energy converters
Author :
Wanlass, M.W. ; Ahrenkiel, S.P. ; Ahrenkiel, R.K. ; Albin, D.S. ; Carapella, J.J. ; Duda, A. ; Geisz, J.F. ; Kurtz, Sarah ; Moriarty, T. ; Wehre, R.J. ; Wernsman, B.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
We discuss lattice-mismatched (LMM) approaches utilizing compositionally step-graded layers and buffer layers that yield III-V photovoltaic devices with performance parameters equaling those of similar lattice-matched (LM) devices. Our progress in developing high-performance, LMM, InP-based GaInAs/InAsP materials and devices for thermophotovoltaic (TPV) energy conversion is highlighted. A novel, monolithic, multi-bandgap, tandem device for solar PV (SPV) conversion involving LMM materials is also presented along with promising preliminary performance results.
Keywords :
III-V semiconductors; buffer layers; energy gap; gallium compounds; indium compounds; solar cells; thermophotovoltaic cells; III-V photovoltaic devices; III-V photovoltaic energy converters; InP-based GaInAs/InAsP devices; InP-based GaInAs/InAsP materials; buffer layers; compositionally step-graded layers; high-performance photovoltaic energy converters; lattice-matched devices; lattice-mismatched approach; monolithic tandem device; multibandgap tandem device; performance parameters; solar photovoltaic conversion; thermophotovoltaic energy conversion; Buffer layers; Crystalline materials; Energy conversion; Epitaxial growth; Hydrogen; III-V semiconductor materials; Photonic band gap; Photovoltaic systems; Solar power generation; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488186
