Native and radiation induced defects in lattice mismatched InGaAs and InGaP

Author

Ekins-Daukes, N.J. ; Arafune, K. ; Lee, H.S. ; Sasaki, T. ; Yamaguchi, M. ; Khan, A. ; Takamoto, T. ; Agui, T. ; Kamimura, K. ; Kaneiwa, M. ; lmaizumi, M. ; Ohshima, T. ; Itoh, H.

Author_Institution

Toyota Technol. Inst., Nagoya, Japan

fYear

2005

fDate

3-7 Jan. 2005

Firstpage

683

Lastpage

686

Abstract

The native and radiation induced defects in lattice mismatched In_0.16GaAs and In_0.56Ga_0.44P are investigated. Subjecting lattice mismatched In_0.16GaAs devices to thermal cycle annealing after growth shows a marked improvement in the open circuit voltage and a related trend is observed from deep level transient spectroscopy (DLTS) measurements as a reduction in the electronic defect density. The role of these native defects in the evolution of the defect levels under 1 MeV electron irradiation is presented and compared to data from lattice mismatched In_0.56Ga_0.44P devices.

Keywords

III-V semiconductors; annealing; crystal defects; deep level transient spectroscopy; deep levels; defect states; electron beam effects; gallium arsenide; gallium compounds; indium compounds; solar cells; 1 MeV; DLTS; Deep Level Transient Spectroscopy; InGaAs-InGaP; defect levels; electron irradiation; electronic defect density; lattice mismatched InGaAs and InGaP; native and radiation induced defects; open circuit voltage; thermal cycle annealing; Annealing; Atomic measurements; Buffer layers; Circuits; Density measurement; Electrons; Indium gallium arsenide; Lattices; Photovoltaic cells; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488223

Filename

1488223