Title :
Native and radiation induced defects in lattice mismatched InGaAs and InGaP
Author :
Ekins-Daukes, N.J. ; Arafune, K. ; Lee, H.S. ; Sasaki, T. ; Yamaguchi, M. ; Khan, A. ; Takamoto, T. ; Agui, T. ; Kamimura, K. ; Kaneiwa, M. ; lmaizumi, M. ; Ohshima, T. ; Itoh, H.
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
Abstract :
The native and radiation induced defects in lattice mismatched In0.16GaAs and In0.56Ga0.44P are investigated. Subjecting lattice mismatched In0.16GaAs devices to thermal cycle annealing after growth shows a marked improvement in the open circuit voltage and a related trend is observed from deep level transient spectroscopy (DLTS) measurements as a reduction in the electronic defect density. The role of these native defects in the evolution of the defect levels under 1 MeV electron irradiation is presented and compared to data from lattice mismatched In0.56Ga0.44P devices.
Keywords :
III-V semiconductors; annealing; crystal defects; deep level transient spectroscopy; deep levels; defect states; electron beam effects; gallium arsenide; gallium compounds; indium compounds; solar cells; 1 MeV; DLTS; Deep Level Transient Spectroscopy; InGaAs-InGaP; defect levels; electron irradiation; electronic defect density; lattice mismatched InGaAs and InGaP; native and radiation induced defects; open circuit voltage; thermal cycle annealing; Annealing; Atomic measurements; Buffer layers; Circuits; Density measurement; Electrons; Indium gallium arsenide; Lattices; Photovoltaic cells; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488223
