Modeling and design of GaAs MESFET control devices for broad-band applications

Author

Jain, Nitin ; Gutmann, Ronald J.

Author_Institution

Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

38

Issue

2

fYear

1990

fDate

2/1/1990 12:00:00 AM

Firstpage

109

Lastpage

117

Abstract

Closed-form expressions are developed for the small-signal parameters of broadband GaAs control MESFETs. The theoretical conducting-state resistance and nonconducting-state capacitance are compared with experimental data and demonstrate the usefulness of the models. Additionally, the power-handling capability of these devices is considered and the various limitations in both conducting and nonconducting states are described. The models show that self-aligned-gate devices (SAGFETs) have a broadband cutoff-frequency figure of merit as much as twice that of conventional MESFETs, although the voltage-handling capability of the SAGFET is considerably inferior

Keywords

III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; solid-state microwave devices; GaAs; MESFET control devices; SAGFET; broadband; conducting-state resistance; cutoff-frequency figure of merit; microwave transistors; models; nonconducting-state capacitance; power-handling capability; self-aligned-gate devices; small-signal parameters; voltage-handling capability; Capacitance; Closed-form solution; Conductivity; Contact resistance; Gallium arsenide; MESFETs; Metallization; Permittivity; Surface resistance; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

Conference_Location

2/1/1990 12:00:00 AM

ISSN

0018-9480

Type

jour

DOI

10.1109/22.46418

Filename

46418