Title :
Modeling and design of GaAs MESFET control devices for broad-band applications
Author :
Jain, Nitin ; Gutmann, Ronald J.
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
2/1/1990 12:00:00 AM
Abstract :
Closed-form expressions are developed for the small-signal parameters of broadband GaAs control MESFETs. The theoretical conducting-state resistance and nonconducting-state capacitance are compared with experimental data and demonstrate the usefulness of the models. Additionally, the power-handling capability of these devices is considered and the various limitations in both conducting and nonconducting states are described. The models show that self-aligned-gate devices (SAGFETs) have a broadband cutoff-frequency figure of merit as much as twice that of conventional MESFETs, although the voltage-handling capability of the SAGFET is considerably inferior
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; solid-state microwave devices; GaAs; MESFET control devices; SAGFET; broadband; conducting-state resistance; cutoff-frequency figure of merit; microwave transistors; models; nonconducting-state capacitance; power-handling capability; self-aligned-gate devices; small-signal parameters; voltage-handling capability; Capacitance; Closed-form solution; Conductivity; Contact resistance; Gallium arsenide; MESFETs; Metallization; Permittivity; Surface resistance; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Conference_Location :
2/1/1990 12:00:00 AM
