Title :
Noise figure of m.e.s.f.e.t.s
Author :
Brewitt-Taylor, C.R. ; Robson, P.N. ; Sitch, J.E.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
fDate :
2/1/1980 12:00:00 AM
Abstract :
The noise figure of a m.e.s.f.e.t. is calculated as a function of drain current using the gradual channel approximation and the Shockley impedance-field technique. The results are conveniently presented as a single universal family of curves with no adjustable empirical factors. The analytical results are compared with those from a 2-dimensional computer simulation.
Keywords :
Schottky gate field effect transistors; electron device noise; semiconductor device models; MESFET; Shockley impedance field technique; drain current; gradual channel approximation; model; noise figure;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
2/1/1980 12:00:00 AM
DOI :
10.1049/ip-i-1.1980.0001
