Title :
Comparison of methods used for determining base spreading resistance
Author :
Unwin, R.T. ; Knott, K.F.
Author_Institution :
Huddersfield Polytechnic, Department of Electrical and Electronic Engineering, Huddersfield, UK
fDate :
4/1/1980 12:00:00 AM
Abstract :
A study of the many methods used for measuring base spreading resistance, rbb´ has shown that some of them are inaccurate or unfeasible when applied to planar transistors. Methods investigated cover the d.c.to microwave frequency range and include coherent and incoherent signal measurements. Comparisons are also made of measured and theoretical values for several types of device. The thermal-noise method appears best because of its accuaracy and wide applicability.
Keywords :
bipolar transistors; electric resistance measurement; semiconductor device testing; solid-state microwave devices; base contact resistance; base metallisation; base spreading resistance; bipolar transistors; coherent signal measurement methods; current crowding; inactive base region; microwave devices; noise performance; planar devices; power gain; second breakdown; thermal noise measurement;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
4/1/1980 12:00:00 AM
DOI :
10.1049/ip-i-1.1980.0010
