Title :
Depletion-mode m.o.s.f.e.t. model including a field-dependent surface mobility
Author :
Baccarani, G. ; Landini, F. ; Ricc????, B.
Author_Institution :
Universit?ƒ\xa0 di Bologna, Istituto di Elettronica, Bologna, Italy
fDate :
4/1/1980 12:00:00 AM
Abstract :
This paper presents an analytical model for depletion-mode m.o.s. transistors which is particularly suitable for c.a.d. applications, and improves the current state of the art by including the effect of the surface-mobility degradation induced by the transverse field. The model is used to fit experimental data obtained on long-channel devices, and turns out to give good results; the mean square error over the whole ID/VDS plane, for several values of the gate- and bulk-source voltages, is of the order of 1%
Keywords :
circuit CAD; insulated gate field effect transistors; semiconductor device models; CAD applications; IGFET; bulk source voltage; depletion mode MOSFET; gate source voltage; long channel devices; semiconductor device models; surface mobility degradation; transverse field;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
4/1/1980 12:00:00 AM
DOI :
10.1049/ip-i-1.1980.0011
