DocumentCode
3558119
Title
Punch-through diode as a power device
Author
de Cogan, D.
Author_Institution
University of Nottingham, Department of Electrical & Electronic Engineering, Nottingham, UK
Volume
127
Issue
2
fYear
1980
fDate
4/1/1980 12:00:00 AM
Firstpage
67
Lastpage
71
Abstract
The punch-through diode is a bidirectional nonlinear device whose speed of response makes it suitable for the suppression of very fast transients. It is autoprotecting above a minimum current density. A simple model to estimate the influence of design parameters on thermal properties is presented, and discrepancies in existing criteria for maximum power-handling capability are discussed.
Keywords
semiconductor device models; semiconductor diodes; transients; bidirectional nonlinear device; current density; junction diodes; power device; punch through diode; semiconductor device models; transient suppression;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
4/1/1980 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1980.0012
Filename
4642477
Link To Document