Title :
Punch-through diode as a power device
Author_Institution :
University of Nottingham, Department of Electrical & Electronic Engineering, Nottingham, UK
fDate :
4/1/1980 12:00:00 AM
Abstract :
The punch-through diode is a bidirectional nonlinear device whose speed of response makes it suitable for the suppression of very fast transients. It is autoprotecting above a minimum current density. A simple model to estimate the influence of design parameters on thermal properties is presented, and discrepancies in existing criteria for maximum power-handling capability are discussed.
Keywords :
semiconductor device models; semiconductor diodes; transients; bidirectional nonlinear device; current density; junction diodes; power device; punch through diode; semiconductor device models; transient suppression;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
4/1/1980 12:00:00 AM
DOI :
10.1049/ip-i-1.1980.0012
