• DocumentCode
    3558123
  • Title

    Filament displacement and refraction losses in a stripe-geometry AIGaAs d.h. laser

  • Author

    Kerps, D.

  • Author_Institution
    Hewlett-Packard, Solid State Laboratory, Hewlett-Packard Laboratories, Palo Alto, USA
  • Volume
    127
  • Issue
    2
  • fYear
    1980
  • fDate
    4/1/1980 12:00:00 AM
  • Firstpage
    94
  • Lastpage
    97
  • Abstract
    The far-field, near-field and waist-intensity distributions are investigated in the nonlinear flux-current regime (kink) of a stripe-geometry d.h. laser at each of its two facets. The results are interpreted as a displacement of a deformable light guide or filament within the laser stripe, which acts as an additional built-in antiguide. Asymmetries in the far-field side-lobe intensities indicate enhanced refraction losses of the displaced filament towards that antiguide boundary towards which the near field moves and the far-field main lobe turns.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; AlGaAs stripe geometry DH laser; deformable light guide; far field side lobe intensity; filament displacement; nonlinear flux current regime; refraction losses; semiconductor junction lasers; waist intensity distributions;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • Conference_Location
    4/1/1980 12:00:00 AM
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1980.0017
  • Filename
    4642482