Title :
Quasistatic and nonequilibrium phenomena in m.o.s. structures under the influence of a constant gate-current bias
Author :
Allman, P.G.C. ; Simmons, J.G.
Author_Institution :
University of Toronto, Department of Electrical Engineering, Toronto, Canada
fDate :
6/1/1980 12:00:00 AM
Abstract :
The quasistatic and nonequilibrium response of an m.o.s. system containing bulk traps under constant gate-current conditions is analysed. It is shown that a particular advantage of the method is that the total semiconductor capacitance can be extracted directly from the curves, thus easing the analysis of quasistatic results for obtaining interface state density. For a specific range of operating conditions the resulting nonequilibrium characteristic is rich in structure, which allows for analysis of the bulk properties of the semiconductor.
Keywords :
capacitance; electron traps; hole traps; interface electron states; metal-insulator-semiconductor structures; semiconductor device models; C/V characteristics; MOS structures; bulk traps; constant gate current bias; interface state density; nonequilibrium phenomena; quasistatic phenomena; semiconductor capacitance;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
6/1/1980 12:00:00 AM
DOI :
10.1049/ip-i-1.1980.0027
