V-groove isolated b.i.f.e.t. technology for micropower i.c.s

This paper describes a V-groove isolated b.i.f.e.t. technology suitable for micropower integratedcircuit fabrication. The V-groove isolation technique offers considerable advantages in area and performance over standard junction isolated technology. The technology provides an ideal combination of active elements which include low pinchoff j.f.e.t.s and bipolar transistors. The characteristics of the devices as well as typical applications of the technology are described.