DocumentCode
3558140
Title
Low-noise millimetre-wave mixer diodes: results and evaluation of a test programme
Author
Keen, N.J.
Author_Institution
Max-Planck-Institut f?ƒ??r Radioastronomie, Bonn, West Germany
Volume
127
Issue
4
fYear
1980
fDate
8/1/1980 12:00:00 AM
Firstpage
188
Lastpage
198
Abstract
The results of extensive measurements on metal-gallium arsenide Schottky-barrier diodes in a waveguide mixer are presented, with emphasis on cooled, low-noise operation. Aspects of diode design and manufacture are reviewed, particularly with a view to the better understanding of noise generation in the diode. It appears that previous current-transport and noise-generation models require modification.
Keywords
III-V semiconductors; Schottky-barrier diodes; electron device noise; gallium arsenide; semiconductor-metal boundaries; solid-state microwave devices; GaAs Schottky barrier diodes; III-V semiconductor; microwave mixer diodes; mm-wave mixer diodes; noise generation; waveguide mixer;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
8/1/1980 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1980.0039
Filename
4642506
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