• DocumentCode
    3558141
  • Title

    Scaled m.o.s. circuits: performances and simulation

  • Author

    Antognetti, P. ; Puggelli, G.

  • Author_Institution
    Universit?ƒ\xa0 di Genova, Istituto di Electrotecnica, Genova, Italy
  • Volume
    127
  • Issue
    4
  • fYear
    1980
  • fDate
    8/1/1980 12:00:00 AM
  • Firstpage
    199
  • Lastpage
    202
  • Abstract
    Transient analysis simulations are used to investigate the m.o.s. device scaling theorem. Calculations are presented of the power-delay curves of loaded static NOR gates for two sets of devices: one, a control device with seven micron channel length, and the other scaled from the control by 0.6. It is shown that, when devices are scaled correctly, circuit performance scales according to the prediction of the scaling theorem. Furthermore, considerations are presented on circuit performance degradation if power-supply voltages are not scaled similarly to device dimensions.
  • Keywords
    digital integrated circuits; field effect integrated circuits; insulated gate field effect transistors; semiconductor device models; MOS device scaling theorem; MOSFET; NOR gates; circuit performance; digital ICs; power delay curves; scaling; transient analysis simulation;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • Conference_Location
    8/1/1980 12:00:00 AM
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1980.0040
  • Filename
    4642507