DocumentCode
3558141
Title
Scaled m.o.s. circuits: performances and simulation
Author
Antognetti, P. ; Puggelli, G.
Author_Institution
Universit?ƒ\xa0 di Genova, Istituto di Electrotecnica, Genova, Italy
Volume
127
Issue
4
fYear
1980
fDate
8/1/1980 12:00:00 AM
Firstpage
199
Lastpage
202
Abstract
Transient analysis simulations are used to investigate the m.o.s. device scaling theorem. Calculations are presented of the power-delay curves of loaded static NOR gates for two sets of devices: one, a control device with seven micron channel length, and the other scaled from the control by 0.6. It is shown that, when devices are scaled correctly, circuit performance scales according to the prediction of the scaling theorem. Furthermore, considerations are presented on circuit performance degradation if power-supply voltages are not scaled similarly to device dimensions.
Keywords
digital integrated circuits; field effect integrated circuits; insulated gate field effect transistors; semiconductor device models; MOS device scaling theorem; MOSFET; NOR gates; circuit performance; digital ICs; power delay curves; scaling; transient analysis simulation;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
8/1/1980 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1980.0040
Filename
4642507
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