DocumentCode :
3558154
Title :
Low pinch-off voltage f.e.t. logic (l.p.f.l.): I.s.i. oriented logic approach using quasinormally off GaAs m.e.s.f.e.t.s.
Author :
Nuzillat, G. ; Damay-Kavala, F. ; Bert, G. ; Arnodo, C.
Author_Institution :
Thomson-CSF, Laboratoire Central de Recherches, Paris, France
Volume :
127
Issue :
5
fYear :
1980
fDate :
10/1/1980 12:00:00 AM
Firstpage :
287
Lastpage :
296
Abstract :
A new l.s.i. oriented logic approach, low pinch-off voltage f.e.t. logic (l.p.f.l.), leading to highly versatile logic gates capable of combining high speed and low power consumption and requiring a standard fabrication process, is introduced and structures of complex logic gates realisable with this approach are described. Furthermore, a tentative comparison of the l.p.f.l. approach with other m.e.s.f.e.t. logic approaches to date is presented to show their respective design trade-offs which dictate the range of applications open to each of these approaches. The comparison is based on both computer simulations and experimental measurements on test circuits such as ring oscillators, flip-flops and binary frequency dividers.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; integrated logic circuits; large scale integration; GaAs MESFET; LSI oriented logic approach; binary frequency dividers; flip flops; logic gates; low pinch off voltage FET logic; ring oscillators;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Publisher :
iet
Conference_Location :
10/1/1980 12:00:00 AM
ISSN :
0143-7100
Type :
jour
DOI :
10.1049/ip-i-1.1980.0056
Filename :
4642524
Link To Document :
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