DocumentCode
3558163
Title
Above-threshold analysis of channelled-substrate-planar (CSP) laser
Author
Shore, K.A.
Author_Institution
University of Liverpool, Department of Electrical Engineering & Electronics, Liverpool, UK
Volume
128
Issue
1
fYear
1981
fDate
2/1/1981 12:00:00 AM
Firstpage
9
Abstract
The first self-consistent description of the above-threshold behaviour of the CSP laser is presented. The analysis incorporates the relationship between the optical field and the lateral variation of the electron concentration in the active region. The influence of current spreading on the gain profile is included in the formalism. Operating characteristics of the device such as near and far-field patterns and light/current curves are found. Devices of differing cross-sectional dimensions are examined.
Keywords
laser theory; semiconductor junction lasers; above threshold analysis; channelled substrate planar laser; electron concentration; gain profile; optical field;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
2/1/1981 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1981.0003
Filename
4642538
Link To Document