Title :
Above-threshold analysis of channelled-substrate-planar (CSP) laser
Author_Institution :
University of Liverpool, Department of Electrical Engineering & Electronics, Liverpool, UK
fDate :
2/1/1981 12:00:00 AM
Abstract :
The first self-consistent description of the above-threshold behaviour of the CSP laser is presented. The analysis incorporates the relationship between the optical field and the lateral variation of the electron concentration in the active region. The influence of current spreading on the gain profile is included in the formalism. Operating characteristics of the device such as near and far-field patterns and light/current curves are found. Devices of differing cross-sectional dimensions are examined.
Keywords :
laser theory; semiconductor junction lasers; above threshold analysis; channelled substrate planar laser; electron concentration; gain profile; optical field;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
2/1/1981 12:00:00 AM
DOI :
10.1049/ip-i-1.1981.0003