• DocumentCode
    3558174
  • Title

    Compatible VVMOS and NMOS technology for power MOS ICs

  • Author

    Lane, W.A. ; Salama, C.A.T.

  • Author_Institution
    University of Toronto, Department of Electrical Engineering, Toronto, Canada
  • Volume
    128
  • Issue
    3
  • fYear
    1981
  • fDate
    6/1/1981 12:00:00 AM
  • Firstpage
    87
  • Lastpage
    91
  • Abstract
    The paper describes a technology for simultaneously realising both power VVMOSTs and small signal planar NMOS devices, that together can form a power MOS IC. Device and circuit constraints are discussed and experimental results from a test IC are presented. A fully developed process, based on such a concept, could find application in such circuits as switching regulators and amplifiers.
  • Keywords
    field effect integrated circuits; integrated circuit technology; power transistors; NMOS technology; VVMOS technology; VVMOSTs; amplifiers; circuit constraints; device constraints; power MOS ICs; small signal planar NMOS devices; switching regulators;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • Conference_Location
    6/1/1981 12:00:00 AM
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1981.0026
  • Filename
    4642563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3558174