Title :
Compatible VVMOS and NMOS technology for power MOS ICs
Author :
Lane, W.A. ; Salama, C.A.T.
Author_Institution :
University of Toronto, Department of Electrical Engineering, Toronto, Canada
fDate :
6/1/1981 12:00:00 AM
Abstract :
The paper describes a technology for simultaneously realising both power VVMOSTs and small signal planar NMOS devices, that together can form a power MOS IC. Device and circuit constraints are discussed and experimental results from a test IC are presented. A fully developed process, based on such a concept, could find application in such circuits as switching regulators and amplifiers.
Keywords :
field effect integrated circuits; integrated circuit technology; power transistors; NMOS technology; VVMOS technology; VVMOSTs; amplifiers; circuit constraints; device constraints; power MOS ICs; small signal planar NMOS devices; switching regulators;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
6/1/1981 12:00:00 AM
DOI :
10.1049/ip-i-1.1981.0026
