Title :
Circuit model of double-heterojunction laser below threshold
Author :
Tucker, Rodney S.
Author_Institution :
University of Queensland, Department of Electrical Engineering, Brisbane, Australia
fDate :
6/1/1981 12:00:00 AM
Abstract :
A new circuit model of a stripe-geometry double-heterojunction injection laser below threshold is presented. The model is derived from the physics of the semiconductor heterojunction, and takes into account the effects of active-layer carrier degeneracy, high-level injection, and nonradiative recombination along the stripe edge. Turn-on delay characteristics and small-signal input resistance characteristics of a laser are computed using the circuit model. Results of these analyses are compared with previous theoretical results and published experimental data.
Keywords :
laser theory; p-n heterojunctions; semiconductor device models; semiconductor junction lasers; active-layer carrier degeneracy; circuit model; high-level injection; nonradiative recombination; small-signal input resistance characteristics; stripe-geometry double-heterojunction injection laser; turn-on delay characteristics;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
6/1/1981 12:00:00 AM
DOI :
10.1049/ip-i-1.1981.0029
