Calculated performance of monolithic hot-electron transistors

The properties of monolithic hot-electron transistors, together with structures required to obtain optimum performance, are described. It is calculated that, in principle, structures in Si and GaAs can be made with delay times ¿ 1 ps, while maintaining useful emitter and collector barriers capable of injecting and collecting electrons with energies well above the conduction band edge in the base. Assuming that the characteristic length for energy loss in these materials is similar, it is calculated that it should be possible to make transistors having FT and FMAX> 100 GHz with power delay products ¿ 1 fJ.