DocumentCode
3558181
Title
Characterisation of Al/AlInAs/GaInAs heterostructures
Author
Morgan, D.V. ; Ohno, H. ; Wood, C.E.C. ; Schaff, W.J. ; Board, K. ; Eastman, L.F.
Author_Institution
Cornell University, School of Electrical Engineering & National Research & Resource Faculty for Submicron Structures, Ithaca, USA
Volume
128
Issue
4
fYear
1981
fDate
8/1/1981 12:00:00 AM
Firstpage
141
Lastpage
143
Abstract
The paper is concerned with the characterisation of Al/AlInAs/GaInAs hetrostructures. A band model is presented for the metal/semiconductor barrier, and the electrical studies are shown to be consistent with this model. Preliminary studies are reported on a DLTS investigation of the hetrostructure and a deep level situated 0.41 eV below the conduction band of the AlInAs.
Keywords
III-V semiconductors; Schottky gate field effect transistors; Schottky-barrier diodes; aluminium; aluminium compounds; deep level transient spectroscopy; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor device models; semiconductor-metal boundaries; Al/AlInAs/GaInAs heterostructures; DLTS investigation; III-V semiconductors; band model; conduction band; metal/semiconductor barrier;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
8/1/1981 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1981.0036
Filename
4642574
Link To Document