DocumentCode :
3558185
Title :
Experimental observation of switching in MISM and MISIM devices
Author :
Darwish, M. ; Board, K.
Author_Institution :
University of Wales, Department of Electrical & Electronic Engineering, University College of Swansea, Swansea, UK
Volume :
128
Issue :
5
fYear :
1981
fDate :
10/1/1981 12:00:00 AM
Firstpage :
161
Lastpage :
164
Abstract :
Predictions have been made for two-state switching in metal-thin insulator-semiconductor-metal (MISIM) structures. In the paper experimental verification of such switching is provided in a V-groove and a surface geometry device. Bidirectional switching is shown for the MISIM device and three-terminal operation is demonstrated.
Keywords :
metal-insulator-semiconductor structures; MISIM devices; MISM devices; V-groove; surface geometry device; three-terminal operation; two-state switching;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Publisher :
iet
Conference_Location :
10/1/1981 12:00:00 AM
ISSN :
0143-7100
Type :
jour
DOI :
10.1049/ip-i-1.1981.0040
Filename :
4642579
Link To Document :
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