DocumentCode :
3558192
Title :
Photovoltaic properties of cadmium-telluride/langmuir-film solar cells
Author :
Roberts, G.G. ; Petty, M.C. ; Dharmadasa, I.M.
Author_Institution :
University of Durham, Department of Applied Physics & Electronics, Durham, UK
Volume :
128
Issue :
6
fYear :
1981
fDate :
12/1/1981 12:00:00 AM
Firstpage :
197
Lastpage :
201
Abstract :
We report the properties of metal-insulator-semiconductor (MIS) solar cells based on n-type CdTe and an anthracene derivative deposited by the Langmuir-Blodgett technique. The incorporation of the organic insulating layer between a gold electrode and the CdTe is found to increase both the effective barrier height of the device measured in the dark and also the open-circuit voltage measured under illumination conditions. The Langmuir-Blodgett deposition technique has allowed us to investigate, in some detail, the dependence of these characteristics on the thickness of the insulating layer. The optimum efficiency of our devices occurs when theorganic film thickness is approximately 2.4nm.
Keywords :
II-VI semiconductors; Langmuir films; cadmium compounds; metal-insulator-semiconductor devices; photovoltaic effects; solar cells; CdTe-Langmuir film solar cell; Langmuir-Blodgett technique; MIS solar cell; anthracene derivative; effective barrier height; n-type CdTe; open-circuit voltage; organic insulating layer; photovoltaic properties;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Publisher :
iet
Conference_Location :
12/1/1981 12:00:00 AM
ISSN :
0143-7100
Type :
jour
DOI :
10.1049/ip-i-1.1981.0049
Filename :
4642589
Link To Document :
بازگشت