Title :
Indium phosphide oxide on Inp for MOSFET applications
Author :
Ai-Refaie, S.N. ; Carroll, J.E.
Author_Institution :
University of Cambridge, Engineering Department, Cambridge, UK
fDate :
12/1/1981 12:00:00 AM
Abstract :
Oxide films have been deposited on InP by sputtering InP in an oxygen DC-excited plasma. The rate of sputtering was enhanced by applying a magnetic field. Preliminary microprobe and Auger analysis of the films has indicated equal proportions of indium and phosphorus with a good incorporation of oxygen and a moderately uniform composition. Measurements on MOS devices have shown a film resistivity of ¿3 × 1012 ¿cm. The oxide film has been used in fabricating n-channel inversion-type MOSFETs.
Keywords :
III-V semiconductors; indium compounds; insulated gate field effect transistors; insulating thin films; oxidation; semiconductor-insulator boundaries; sputtering; Auger analysis; III-V semiconductor; InP; InP oxide films; MOSFET applications; O2 DC excited plasma oxidation; film resistivity; insulating layer; n-channel inversion-type MOSFET; sputtering;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
12/1/1981 12:00:00 AM
DOI :
10.1049/ip-i-1.1981.0051
