Abstract :
This book is the first of three volumes. Twelve authors have contributed to 8 chapters in Volume 1, on topics ranging from MOS VLSI processing and modelling to the role of (US) Government in microelectronics. The three volumes are designed to update scientists and engineers who wish to acquaint themselves with key developments in VLSI over significant aspects of the field. The book contents are written as stand-alone chapters, permitting the reader to confine himself to a single self-contained chapter on a particular topic. This aspect is useful and several chapters present good reviews: particularly Chap. 6 by Ferry on the physics and modelling of submicron FETs, and a fascinating chapter by Keyes on the limitations of systems in VLSI. Also included is an interesting discussion on the Cornell University, US National Submicron Facility, reviewing its resources and achievements.
