• DocumentCode
    3558224
  • Title

    Schottky photodiodes incorporating monolayers formed by adsorption and by the Langmuir-Blodgett technique

  • Author

    Tredgold, R.H. ; Smith, G.W.

  • Author_Institution
    University of Lancaster, Department of Physics, Lancaster, UK
  • Volume
    129
  • Issue
    4
  • fYear
    1982
  • fDate
    8/1/1982 12:00:00 AM
  • Firstpage
    137
  • Lastpage
    140
  • Abstract
    The efficiency of Schottky-barrier photodiodes can be much improved by the inclusion of a monolayer of a suitable amphiphilic substance. Such layers have hitherto been formed by the Langmuir-Blodgett technique. In the paper we describe results obtained using monolayers adsorbed from an alkane solvent, and compare them with results obtained using the Langmuir-Blodgett method. It is shown that adsorbed layers lead to superior layers, and also make it possible to use perfluorinated carboxylic acids which have a pKa too low to be applied by the Langmuir-Blodgett technique.
  • Keywords
    III-V semiconductors; Langmuir films; Schottky-barrier diodes; adsorbed layers; gallium compounds; monolayers; photodiodes; GaP; Langmuir-Blodgett technique; Schottky barrier diode; Schottky photodiodes; adsorption; alkane solvent; amphiphilic substance; monolayers; perfluorinated carboxylic acids;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • Conference_Location
    8/1/1982 12:00:00 AM
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1982.0030
  • Filename
    4642629