DocumentCode :
3558224
Title :
Schottky photodiodes incorporating monolayers formed by adsorption and by the Langmuir-Blodgett technique
Author :
Tredgold, R.H. ; Smith, G.W.
Author_Institution :
University of Lancaster, Department of Physics, Lancaster, UK
Volume :
129
Issue :
4
fYear :
1982
fDate :
8/1/1982 12:00:00 AM
Firstpage :
137
Lastpage :
140
Abstract :
The efficiency of Schottky-barrier photodiodes can be much improved by the inclusion of a monolayer of a suitable amphiphilic substance. Such layers have hitherto been formed by the Langmuir-Blodgett technique. In the paper we describe results obtained using monolayers adsorbed from an alkane solvent, and compare them with results obtained using the Langmuir-Blodgett method. It is shown that adsorbed layers lead to superior layers, and also make it possible to use perfluorinated carboxylic acids which have a pKa too low to be applied by the Langmuir-Blodgett technique.
Keywords :
III-V semiconductors; Langmuir films; Schottky-barrier diodes; adsorbed layers; gallium compounds; monolayers; photodiodes; GaP; Langmuir-Blodgett technique; Schottky barrier diode; Schottky photodiodes; adsorption; alkane solvent; amphiphilic substance; monolayers; perfluorinated carboxylic acids;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Publisher :
iet
Conference_Location :
8/1/1982 12:00:00 AM
ISSN :
0143-7100
Type :
jour
DOI :
10.1049/ip-i-1.1982.0030
Filename :
4642629
Link To Document :
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