DocumentCode
3558235
Title
Assessment of advanced laser structures by photoluminescence
Author
Hatch, C.B. ; Murrell, D.L. ; Walling, R.H.
Author_Institution
British Telecom, Research Laboratories, Ipswich, UK
Volume
129
Issue
6
fYear
1982
fDate
12/1/1982 12:00:00 AM
Firstpage
214
Lastpage
217
Abstract
A photoluminescence system has been developed for use in the 1.2 to 2.0 ¿m wavelength range for the rapid nondestructive evaluation of epitaxial layer structures prior to semiconductor laser fabrication. This system, which has high spatial and spectral resolution, is used to examine narrow-active-layer stripes of double-heterostructure GaInAsP material intended for 1.3 and 1.5 ¿m lasers. The technique permits assessment of entire wafers, and gives advance information on probable yields and wavelengths of fully fabricated devices.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor junction lasers; 1.2 to 2.0 micron wavelength range; advanced laser structures; dobule-heterostructure GaInAsP; epitaxial layer; narrow-active-layer stripes; photoluminescence; semiconductor laser fabrication; yields;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
12/1/1982 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1982.0049
Filename
4642650
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