Assessment of advanced laser structures by photoluminescence

A photoluminescence system has been developed for use in the 1.2 to 2.0 ¿m wavelength range for the rapid nondestructive evaluation of epitaxial layer structures prior to semiconductor laser fabrication. This system, which has high spatial and spectral resolution, is used to examine narrow-active-layer stripes of double-heterostructure GaInAsP material intended for 1.3 and 1.5 ¿m lasers. The technique permits assessment of entire wafers, and gives advance information on probable yields and wavelengths of fully fabricated devices.