Title :
Single-mode lasers for optical communications
Author_Institution :
RCA, David Sarnoff Research Center, Princeton, USA
fDate :
12/1/1982 12:00:00 AM
Abstract :
The intended fibre-optic applications for both short- and long-wavelength single-mode diode lasers are discussed. Major types of single-mode devices are grouped and described in two Sections: lowpower (1¿7 mW/facet) lasers and high-power (10¿50 mW/facet) lasers. The low-power laser Section contains principles of fundamental-mode stabilisation, and a treatment in parallel of AlGaAs and InGaAsP buriedmesa, nonplanar-substrate and laterally lossy devices. The high-power laser Section contains the various means of achieving high-power reliable single-mode operation and a description and comparison of major types of high-power AlGaAs devices. Emphasis is placed on the performance of the constricted doubleheterojunction large-optical-cavity (CDH-LOC) laser. A discussion of single-longitudinal-mode stabilisation and device dynamic behaviour is also presented.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser frequency stability; laser modes; optical communication equipment; semiconductor junction lasers; AlGaAs; InGaAsP; constricted double-heterojunction large-optical-cavity; device dynamic behaviour; fibre-optic applications; fundamental-mode stabilisation; high power lasers; low power lasers; optical communications; semiconductor lasers; single-longitudinal-mode stabilisation; single-mode diode lasers;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
12/1/1982 12:00:00 AM
DOI :
10.1049/ip-i-1.1982.0052