DocumentCode :
3558246
Title :
Closely coupled twin-stripe lasers
Author :
White, I.H. ; Carroll, J.E. ; Plumb, R.G.
Author_Institution :
University of Cambridge, Engineering Department, Cambridge, UK
Volume :
129
Issue :
6
fYear :
1982
fDate :
12/1/1982 12:00:00 AM
Firstpage :
291
Lastpage :
296
Abstract :
The paper reports on novel effects exhibited by closely coupled twin-stripe lasers, Two forms of bistability have been observed. One effect is possibly caused by switching of waveguiding mechanisms from gain guiding to self-focusing. The second mechanism exhibits a large shift in near-field distribution from one side of the laser to the other. The speed of this bistable switching has been found to be between 800 and 900 ps. The effect of optical injection on bistability is also noted. Finally, twin-stripe lasers allow picosecond pulses as short as 20 ps to be generated, and the paper records the dependence of picosecond pulsewidth on asymmetric waveguiding.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical bistability; optical self-focusing; semiconductor junction lasers; GaAlAs laser; asymmetric waveguiding; bistability; bistable switching; closely coupled twin-stripe lasers; effect of optical injection; gain guiding; near-field distribution; picosecond pulsewidth; self-focusing; semiconductor laser; switching of waveguiding mechanisms;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Publisher :
iet
Conference_Location :
12/1/1982 12:00:00 AM
ISSN :
0143-7100
Type :
jour
DOI :
10.1049/ip-i-1.1982.0060
Filename :
4642661
Link To Document :
بازگشت