DocumentCode
3558256
Title
Comparison between two-dimensional short-channel MOSFET models
Author
Kumar, Umesh
Author_Institution
Indian Institute of Technology, Department of Electrical Engineering, New Dehli, India
Volume
130
Issue
1
fYear
1983
fDate
2/1/1983 12:00:00 AM
Firstpage
37
Lastpage
46
Abstract
The miniaturisation of MOSFETs in MOS LSI to achieve high packing density, high speed, low cost and an ultra high performance has led to the development of very-short-channel MOS devices. This has given rise to several important small-geometry effects on MOSFET characteristics which cannot be described by the conventional one-dimensional analysis. A comprehensive review is presented of the various approaches aimed at two-dimensional modelling of these devices.
Keywords
field effect integrated circuits; insulated gate field effect transistors; large scale integration; reviews; semiconductor device models; MOS LSI; review; short-channel MOSFET models; small-geometry effects; two-dimensional modelling;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
2/1/1983 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1983.0008
Filename
4642675
Link To Document