Title :
Static model of DH laser
Author :
MacH????????, J.
Author_Institution :
Institute of Radio Engineering and Electronics, Czechoslovak Academy of Sciences, Prague, Czechoslovakia
fDate :
4/1/1983 12:00:00 AM
Abstract :
A method of complex analysis of the double-heterostructure stripe-geometry laser, based on a new static model, is presented. The optical field distribution in the active region of the laser is described by the wave equation. The interaction between the optical field and free-charge carriers is expressed by the set of rate equations describing also the carrier-concentration profile. Owing to the interaction, it is necessary to solve these equations by a self-consistent procedure. The results of the analysis are light-current characteristics, current dependences of a modal gain, spectra and a near-field pattern. These characteristics are demonstrated in an example.
Keywords :
laser theory; semiconductor junction lasers; DH laser; active region; carrier-concentration profile; double-heterostructure stripe-geometry laser; free-charge carriers; light-current characteristics; modal gain; near-field pattern; optical field distribution; rate equations; self-consistent procedure; semiconductor laser; static model; wave equation;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
4/1/1983 12:00:00 AM
DOI :
10.1049/ip-i-1.1983.0015