Title :
Comparison of MOS processes for VLSI
Author :
Oldham, H.E. ; Partridge, S.L.
Author_Institution :
GEC, Research Laboratories, Hirst Research Centre, Wembley, UK
fDate :
6/1/1983 12:00:00 AM
Abstract :
A comparison of semiconductor technologies for VLSI is presented with particular reference to the limitations imposed by fundamental, technological and circuit-design considerations. Unichannel MOS and CMOS on single-crystal silicon or insulating substrates are the primary subjects for discussion.
Keywords :
field effect integrated circuits; integrated circuit technology; large scale integration; reviews; CMOS; IC technology; MOS processes; VLSI; insulating substrates; semiconductor technologies; single crystal Si substrates; unichannel MOS;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
6/1/1983 12:00:00 AM
DOI :
10.1049/ip-i-1.1983.0022
