Title :
Simulation and measurement of c/v doping profiles in multilayer structures
Author :
Whiteaway, J.E.A.
Author_Institution :
Standard Telecommunication Laboratories Limited, Harlow, UK
fDate :
8/1/1983 12:00:00 AM
Abstract :
C/V doping profiles are simulated through n-type multilayer structures containing heterojunctions. The perceived doping profile obtained from C/V measurements can differ markedly from the actual carrier profile in the vicinity of a hetero- or homojunction. The model is applied to conventional FET structures, high-electron-mobility transistors and superlattices.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; doping profiles; field effect transistors; gallium arsenide; p-n heterojunctions; p-n homojunctions; semiconductor superlattices; C/V measurements; FET structures; Ga1-xAlxAs; III-V semiconductors; band structure; carrier profile; doping profiles; heterojunctions; high-electron-mobility transistors; homojunction; model; n-type multilayer structures; superlattices;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
8/1/1983 12:00:00 AM
DOI :
10.1049/ip-i-1.1983.0030
