DocumentCode
3558272
Title
Mott-barrier mixer diodes with improved semiconductor profiles for cooled operation at submillimetre wavelengths
Author
Keen, N.J.
Author_Institution
Max-Planck-Institut f?ƒ??r Radioastronomie, Bonn, West Germany
Volume
130
Issue
4
fYear
1983
fDate
8/1/1983 12:00:00 AM
Firstpage
171
Lastpage
174
Abstract
The use of thick, low-doped epitaxial profiles permits lower noise, lower capacitance Mott-barrier mixer diodes to be fabricated without complicating diode manufacturing technology. The paper reports model predictions for metal-GaAs diodes made from such materials.
Keywords
III-V semiconductors; Schottky-barrier diodes; doping profiles; gallium arsenide; mixers (circuits); semiconductor device models; GaAs; III-V semiconductors; Mott-barrier mixer diodes; Schottky barrier diodes; cooled operation; depletion capacitance; doping profiles; low-doped epitaxial profiles; model predictions; semiconductor device fabrication; submillimetre wavelengths;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
8/1/1983 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1983.0031
Filename
4642701
Link To Document