DocumentCode :
3558282
Title :
Chemical-sensitive field-effect transistors
Author :
Sibbald, A.
Author_Institution :
University of Newcastle, Department of Physical Chemistry, Newcastle upon Tyne, UK
Volume :
130
Issue :
5
fYear :
1983
fDate :
10/1/1983 12:00:00 AM
Firstpage :
233
Lastpage :
244
Abstract :
The integration of various types of semiconductor devices with particular electrochemically active thin films makes possible a new generation of integrated-circuit chemical microtransducers which have many important (and unique) advantages over their conventional antecedents, including small size, robust solid-state nature and the potential for low-cost mass-fabrication; attributes which are particularly appropriate for biomedical usage. The prime semiconductor device for such applications is the MIS transistor. first modified into an ion-sensitive (chemical-sensitive) field-effect transistor (ISFET, ChemFET) in 1970. The paper reviews the development of ChemFET devices since their inception, and describes the important aspects of their theory, structure and design with particular emphasis on the practical features of device operation. As an illustrative example, a novel triple-function chemical-sensing IC for the simultaneous measurement of K+, H+ and Ca2+ in aqueous solutions is described.
Keywords :
chemical variables measurement; electric sensing devices; field effect integrated circuits; insulated gate field effect transistors; reviews; transducers; ChemFET devices; IGFET; ISFET; MIS transistor; biomedical transducers; chemical sensitive field-effect transistors; chemical-sensing IC; integrated-circuit chemical microtransducers; ion sensitive FET; reviews;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Publisher :
iet
Conference_Location :
10/1/1983 12:00:00 AM
ISSN :
0143-7100
Type :
jour
DOI :
10.1049/ip-i-1.1983.0042
Filename :
4642713
Link To Document :
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