Title : 
Correspondance: Lateral current spreading in stripe-contact semiconductor lasers
         
        
            Author : 
Chua, S.J. ; Leong, M.S. ; Chan, D.S.H.
         
        
            Author_Institution : 
National University of Singapore, Department of Electrical Engineering, Singapore, Singapore
         
        
        
        
        
            fDate : 
12/1/1983 12:00:00 AM
         
        
        
        
            Abstract : 
Current spreading in junction lasers is calculated from a resistive model with the condition of constant potential at the stripe. Taking the resistivity of the active layer to be small, the current spreading obtained from this model compares well with one that takes into account diffusion and recombination at thepn-junction.
         
        
            Keywords : 
semiconductor junction lasers; junction lasers; lateral current spreading; p-n junction; resistive model; stripe-contact semiconductor lasers;
         
        
        
            Journal_Title : 
Solid-State and Electron Devices, IEE Proceedings I
         
        
        
            Conference_Location : 
12/1/1983 12:00:00 AM
         
        
        
        
            DOI : 
10.1049/ip-i-1.1983.0054