• DocumentCode
    3558305
  • Title

    Single drift impatt diodes on diamond heat sinks for W-band frequencies

  • Author

    Leistner, D.

  • Author_Institution
    Fa. Rohde & Schwarz GmbH & Co. KG, Abt. 3 EMS, M?ƒ??nchen, West Germany
  • Volume
    131
  • Issue
    2
  • fYear
    1984
  • fDate
    4/1/1984 12:00:00 AM
  • Firstpage
    56
  • Lastpage
    58
  • Abstract
    High-power silicon pnn¿ impatt dioes have been fabricated by a simple diffusion process for operation on diamond heat sinks. The maximum outputpower of 0.5 W has been achieved at 90 GHz with diodes of 46 fim in diameter. Owingto the low thermal resistance of 11 K/W the corresponding junction temperature is considerably below 200°C.
  • Keywords
    IMPATT diodes; elemental semiconductors; heat sinks; silicon; 90 GHz; EHF; IMPATT diodes; Si; W-band frequencies; diamond heat sinks; diffusion process; elemental semiconductor; p+-n-n+; single drift device; solid-state microwave devices;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • Conference_Location
    4/1/1984 12:00:00 AM
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1984.0016
  • Filename
    4642744
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3558305