• DocumentCode
    3558308
  • Title

    Performance evaluation of photovoltaic silicon cells under concentrated sunlight

  • Author

    Zakzouk, A.K.M. ; Electrochem, M. ; Mujahid, A. ; El-Shobokshy, M.S.

  • Author_Institution
    King Saud University, College of Engineering, Riyadh, Saudi Arabia
  • Volume
    131
  • Issue
    2
  • fYear
    1984
  • fDate
    4/1/1984 12:00:00 AM
  • Firstpage
    66
  • Lastpage
    72
  • Abstract
    The electrical performance of concentrated photovoltaic Si cells has been studied underthe application of real sunlight. The photogenerated current increases linearly with cell temperature at a rate of 5 mA/°C, and it increases with the normal incident solar intensity. The difference between the cell temperature and the lowest cooler temperature increases sharply with incident solar intensity. The module open-circuit voltage decreases with increasing cell temperature. The rate decreases with decreasing normal solar intensity. The module open-circuit voltage increases with normal incident solar intensity. The rate decreases as the incident solarintensity increases. The module efficiency decreases with increasing cell temperature at a ratewhich depends on incident solar intensity and cell temperature. As the incident solar intensity increases, the reduction in efficiency per degree rise in cell temperature decreases. For a given cell temperature, the module efficiency increases with incident power to a maximum and then decreases. A normalised empirical formula relating the incident solar intensity to the cell temperature, for the maximum efficiency condition, is obtained.
  • Keywords
    elemental semiconductors; photovoltaic cells; silicon; solar cells; cell temperature; concentrated sunlight; electrical performance; elemental semiconductors; incident solar intensity; module efficiency; open-circuit voltage; photovoltaic Si cells; solar cells;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • Conference_Location
    4/1/1984 12:00:00 AM
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1984.0019
  • Filename
    4642747