Title :
Band structure of δ-Sn and Ge-Sn alloys
Author_Institution :
Standard Telecommunication Laboratories Ltd., Harlow, UK
fDate :
6/1/1984 12:00:00 AM
Abstract :
C.H.L. Goodman contains statements which, if correct, would cast doubt upon much of the experimental work done prior to 1981 on a-Sn, the diamond lattice, semiconducting phase of tin. In this article, we review the evidence and argue that there already exists in the literature ample rebuttal of Goodman´s thesis.
Keywords :
band structure of crystalline semiconductors and insulators; elemental semiconductors; germanium alloys; semiconductor materials; tin; tin alloys; Ge-Sn alloys; diamond lattice; direct gap applications; gamma-Sn; semiconducting phase;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Conference_Location :
6/1/1984 12:00:00 AM
DOI :
10.1049/ip-i-1.1984.0029