DocumentCode
3558316
Title
Band structure of δ-Sn and Ge-Sn alloys
Author
Goodman, C.H.L.
Author_Institution
Standard Telecommunication Laboratories Ltd., Harlow, UK
Volume
131
Issue
3
fYear
1984
fDate
6/1/1984 12:00:00 AM
Firstpage
109
Lastpage
110
Abstract
C.H.L. Goodman contains statements which, if correct, would cast doubt upon much of the experimental work done prior to 1981 on a-Sn, the diamond lattice, semiconducting phase of tin. In this article, we review the evidence and argue that there already exists in the literature ample rebuttal of Goodman´s thesis.
Keywords
band structure of crystalline semiconductors and insulators; elemental semiconductors; germanium alloys; semiconductor materials; tin; tin alloys; Ge-Sn alloys; diamond lattice; direct gap applications; gamma-Sn; semiconducting phase;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
6/1/1984 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1984.0029
Filename
4642758
Link To Document