Charge control model for switching transients of metal-tunnel oxide-semiconductor thyristor

A charge control model is employed to derive the expressions for the switching transients of the pn+ MIST operated in both common-emitter monostable and bistable modes. The dependence of the transients on the magnitude of driving pulse, load resistance, minority-carrier lifetime and device area is considered. The optimisation of the switching times is then discussed. Finally, the experimental verification of the theory is presented.