Title :
Noise performance of Si/Si1-xGex FETs
Author :
Anwar, A.F.M. ; Liu, Kuo-Wei ; Kesan, Vijay P.
Author_Institution :
Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA
fDate :
10/1/1995 12:00:00 AM
Abstract :
Noise characteristics are evaluated for SiGe/Si based n-channel MODFETs and p-channel MOSFETs. The analysis is based on a self-consistent solution of Schrodinger and Poisson´s equations. The model predicts a superior minimum noise figure for an n-channel MODFET at 77 K. P-channel MOSFETs behave similar to n-channel devices operating at 300 K. Minimum noise figure decreases with increasing quantum well (QW) width for both n- and p-channel devices. However, the p-channel devices are less sensitive to QW width variation. Minimum noise temperature behaves similarly. As observed, a range of doped epilayer thickness exists where minimum noise figure is a minimum for both n- and p-channel FETs.
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; high electron mobility transistors; semiconductor device models; semiconductor device noise; semiconductor materials; silicon; 300 K; 77 K; HEMT; Poisson equation; Schrodinger equation; Si-SiGe; Si/Si1-xGex FETs; doped epilayer thickness; minimum noise temperature; n-channel MODFETs; noise performance; p-channel MOSFETs; FETs; Germanium silicon alloys; HEMTs; MODFETs; MOSFETs; Noise figure; Poisson equations; Predictive models; Silicon germanium; Temperature sensors;
Journal_Title :
Electron Devices, IEEE Transactions on
Conference_Location :
10/1/1995 12:00:00 AM
