Title :
Electrophotographic patterning of thin-film silicon on glass foil
Author :
Gleskova, H. ; Wagner, S. ; Shen, D.S.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on /spl sim/50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.
Keywords :
amorphous semiconductors; electrophotography; elemental semiconductors; etching; foils; glass; semiconductor technology; semiconductor thin films; silicon; Cr; Si:H; a-Si:H; amorphous silicon; electrophotographic patterning; etch mask; glass foil; glass substrates; large-area thin-film circuits; lift-off; roll-to-roll patterning; thin films; toner; xerographic copier; Amorphous silicon; Etching; Glass; Inorganic materials; Printers; Printing; Semiconductor thin films; Substrates; Thin film circuits; Thin film devices;
Journal_Title :
Electron Device Letters, IEEE
