Author_Institution :
Phoenix Corp. Res. Lab., Motorola Inc., Tempe, AZ, USA
Abstract :
The maximum power density of Si, GaAs, and 4H-SiC MESFET´s was modeled using material parameters, a planar MESFET cross section, and a piecewise linear MESFET drain characteristic. The maximum power density for the Si, GaAs, and 4H-SiC was calculated to be 0.45 W/mm, 0.78 W/mm, and 17.37 W/mm at drain voltages of 8.4 V, 8.3 V, and 105 V, respectively. Modeling power density as a function of drain voltage showed that, for low voltage applications, the GaAs MESFET has the highest power density because of its high electron mobility and very low channel resistance (R/sub on/). For high voltage applications, the 4H-SiC MESFET has the highest absolute power density because of the higher breakdown voltage of this material. Experiment data agree qualitatively with the modeled results.<>
Keywords :
III-V semiconductors; UHF field effect transistors; electric breakdown; electron mobility; elemental semiconductors; gallium arsenide; power MESFET; power field effect transistors; semiconductor device models; semiconductor materials; silicon; silicon compounds; 4H-SiC; 8.3 to 105 V; GaAs; RF MESFET power densities; Si; SiC; UHF operation; breakdown voltage; channel resistance; drain voltage; electron mobility; high voltage applications; low voltage applications; material parameters; maximum power density; model; piecewise linear drain character; planar MESFET cross section; Electron mobility; Gallium arsenide; MESFETs; P-n junctions; Piecewise linear approximation; Power amplifiers; Radio frequency; Silicon carbide; Surface resistance; Voltage;
