Title :
Linearity of Modified Uni-Traveling Carrier Photodiodes
Author :
Beling, Andreas ; Pan, Huapu ; Chen, Hao ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Univ., Charlottesville, VA
Abstract :
The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier (UTC) photodiode are characterized using a two-tone setup. At 0.3-GHz modulation frequency and photocurrents above 40 mA, the third-order local intercept point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiode´s 3-dB bandwidth. A simple equivalent circuit model with a voltage-dependent responsivity and a voltage- and photocurrent-dependent junction capacitance is used to explain the frequency characteristics of the intermodulation distortions.
Keywords :
III-V semiconductors; capacitance; equivalent circuits; gallium arsenide; indium compounds; intermodulation distortion; photodiodes; InGaAs-InP; charge compensated modified unitraveling carrier photodiode; equivalent circuit model; frequency 0.3 GHz; intermodulation distortions; modulation frequency; photocurrent-dependent junction capacitance; photocurrents; third-order intermodulation distortions; third-order local intercept point; voltage-dependent junction capacitance; Bandwidth; Equivalent circuits; Frequency modulation; Indium gallium arsenide; Indium phosphide; Intermodulation distortion; Linearity; Photoconductivity; Photodiodes; Voltage; InGaAs; linearity; photodiode (PD); third-order intermodulation distortion;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2008.927184
