Linearity of Modified Uni-Traveling Carrier Photodiodes

Author

Beling, Andreas ; Pan, Huapu ; Chen, Hao ; Campbell, Joe C.

Author_Institution

Dept. of Electr. & Comput. Eng., Virginia Univ., Charlottesville, VA

Volume

26

Issue

15

fYear

2008

Firstpage

2373

Lastpage

2378

Abstract

The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier (UTC) photodiode are characterized using a two-tone setup. At 0.3-GHz modulation frequency and photocurrents above 40 mA, the third-order local intercept point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiode´s 3-dB bandwidth. A simple equivalent circuit model with a voltage-dependent responsivity and a voltage- and photocurrent-dependent junction capacitance is used to explain the frequency characteristics of the intermodulation distortions.

Keywords

III-V semiconductors; capacitance; equivalent circuits; gallium arsenide; indium compounds; intermodulation distortion; photodiodes; InGaAs-InP; charge compensated modified unitraveling carrier photodiode; equivalent circuit model; frequency 0.3 GHz; intermodulation distortions; modulation frequency; photocurrent-dependent junction capacitance; photocurrents; third-order intermodulation distortions; third-order local intercept point; voltage-dependent junction capacitance; Bandwidth; Equivalent circuits; Frequency modulation; Indium gallium arsenide; Indium phosphide; Intermodulation distortion; Linearity; Photoconductivity; Photodiodes; Voltage; InGaAs; linearity; photodiode (PD); third-order intermodulation distortion;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2008.927184

Filename

4652262