High-Power InGaAs/InP Partially Depleted Absorber Photodiodes for Microwave Generation

Author

Malyshev, Sergei A. ; Chizh, Alexander L. ; Vasileuski, Yury G.

Author_Institution

Lab. of Semicond. Optoelectron., Nat. Acad. of Sci. of Belarus, Minsk

Volume

26

Issue

15

fYear

2008

Firstpage

2732

Lastpage

2739

Abstract

A 2-D fully coupled electrothermal physical model of a p-i-n photodiode, which takes into account external electric circuit, has been developed. Based on numerical simulation, we present the data on the maximal output microwave power with appropriate optical-to-microwave conversion loss for InGaAsP/InP partially depleted absorber photodiodes in the frequency range from 10 to 60 GHz.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; microwave generation; p-i-n photodiodes; semiconductor device models; 2-D fully coupled electrothermal physical model; InGaAs-InP; electric circuit; frequency 10 GHz to 60 GHz; microwave generation; millimeter-wave generation; optical-to-microwave conversion; p-i-n photodiode; partially depleted absorber photodiodes; semiconductor device simulation; semiconductor device thermal factors; Coupling circuits; Electrothermal effects; Frequency conversion; Indium gallium arsenide; Indium phosphide; Microwave generation; Numerical simulation; Optical frequency conversion; Optical losses; PIN photodiodes; Microwave generation; millimeter-wave generation; p-i-n photodiodes; semiconductor device simulation; semiconductor device thermal factors;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2008.927594

Filename

4652288