Title :
An InP HBT-Based Oscillator Monolithically Integrated With a Photodiode
Author :
Shumakher, Evgeny ; Magrisso, Tsufit ; Kraus, Shraga ; Cohen-Elias, Doron ; Gavrilov, Arkady ; Cohen, Shimon ; Eisenstein, Gadi ; Ritter, Dan
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa
Abstract :
An indium phosphide heterojunction bipolar transistor (InP HBT) oscillator chip was monolithically integrated with an on chip p-i-n photodiode. A controllable locking range was obtained in unidirectional injection locking. High-purity optoelectronic oscillator with parasitic modes lower than -4 dBc resulted from bidirectional injection locking. The optoelectronic oscillator power consumption was 50 mW while providing output power of - 2 dBm . The overall chip size is 1.3 times 0.8 mm.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; injection locked oscillators; integrated optoelectronics; microwave oscillators; microwave photonics; monolithic integrated circuits; optical phase locked loops; p-i-n photodiodes; InP; InP HBT-based oscillator; bidirectional injection locking; controllable locking; indium phosphide heterojunction bipolar transistor; monolithic integration; on-chip p-i-n photodiode; optoelectronic oscillator; power 50 mW; unidirectional injection locking; Heterojunction bipolar transistors; Indium phosphide; Injection-locked oscillators; Microwave oscillators; Microwave photonics; Microwave technology; Monolithic integrated circuits; Optical distortion; Phase noise; Photodiodes; Heterojunction bipolar transistor (HBT); indium phosphide (InP); injection-locked oscillators; optical oscillators; optical phase locked loops; optoelectronic; photodiodes;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2008.927615
