An Ultraviolet (UV) Detector Using a Ferroelectric Thin Film With In-Plane Polarization

Author

Gan, Bee Keen ; Yao, Kui ; Lai, Szu Cheng ; Chen, Yi Fan ; Goh, Phoi Chin

Author_Institution

Inst. of Mater. Res. & Eng., Agency for Sci. Technol. & Res. (A*STAR), Singapore

Volume

29

Issue

11

fYear

2008

Firstpage

1215

Lastpage

1217

Abstract

Different from the semiconductor photovoltaic device on the basis of an interfacial effect, UV detection was realized in this letter by using bulk photovoltaic mechanism involving the depolarization field in a W-doped Pb_0.97La_0.03(Zr_0.52Ti_0.48)O₃ (PLWZT) ferroelectric thin film. A prototype of UV detector was demonstrated in the laboratory as well as under sunlight, in which the ferroelectric PLWZT thin film was polarized in the plane of the film surface. Characteristics of the photovoltaic response of the ferroelectric thin films and their application values for UV detection were analyzed.

Keywords

dielectric polarisation; ferroelectric devices; ferroelectric materials; ferroelectric thin films; lanthanum compounds; lead compounds; photodetectors; photovoltaic effects; tungsten; ultraviolet detectors; PLWZT thin film; PLZT:W; Pb_0.97La_0.03(Zr_0.52Ti_0.48)O₃ ferroelectric thin film; UV detection; bulk photovoltaic mechanism; depolarization field; in-plane polarization; interfacial effect; ultraviolet detector; Detectors; Ferroelectric materials; Photovoltaic systems; Polarization; Prototypes; Semiconductor thin films; Solar power generation; Thin film devices; Transistors; Zirconium; Ferroelectric devices; photovoltaic effects; thin films; ultraviolet detectors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2005254

Filename

4655491