Monolithic Photoreceiver Constructed With a ZnSe MSM Photodiode and an InGaP/GaAs HBT

Author

Chen, Ming-Yao ; Chang, Chung-Cheng

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Ocean Univ., Keelung

Volume

29

Issue

11

fYear

2008

Firstpage

1212

Lastpage

1214

Abstract

The monolithic integration of a ZnSe metal-semiconductor-metal photodiode and an InGaP/GaAs heterojunction bipolar transistor has been achieved successfully on a GaAs substrate. As a result of a current amplification ratio of 20.8, the present monolithic photoreceiver illuminated at an optical input-power intensity of 10 muW has shown high voltage amplification sensitivity of -29.6 mV/muW. The fabrication process and characterization for the integrated device will be useful for the development of wide-bandgap-based short-wavelength optoelectronic integrated circuits in the future.

Keywords

II-VI semiconductors; III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; optical receivers; photodiodes; wide band gap semiconductors; zinc compounds; ZnSe-InGaP-GaAs; heterojunction bipolar transistor; metal-semiconductor-metal photodiode; monolithic photoreceiver; optical input-power intensity; power 10 muW; short-wavelength optoelectronic integrated circuits; voltage amplification; wide-bandgap; Etching; Gallium arsenide; Heterojunction bipolar transistors; Monolithic integrated circuits; Ocean temperature; Optical device fabrication; Photodetectors; Photodiodes; Substrates; Zinc compounds; Heterojunction bipolar transistors (HBT); InGaP; ZnSe; metal–semiconductor–metal (MSM); photoreceiver;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2005430

Filename

4655494