DocumentCode :
3559256
Title :
Dielectric Charging in Electrostatically Actuated MEMS Ohmic Switches
Author :
Peng, Zhen ; Palego, Cristiano ; Halder, Subrata ; Hwang, James C M ; Jahnes, Christopher V. ; Etzold, K.F. ; Cotte, John M. ; Magerlein, John H.
Author_Institution :
Lehigh Univ., Bethlehem, PA
Volume :
8
Issue :
4
fYear :
2008
Firstpage :
642
Lastpage :
646
Abstract :
MEMS switches having separate signal and actuation electrodes with different air gaps are fabricated using a copper-based CMOS interconnect manufacturing process. By using a control voltage high enough to establish metal-metal contact between the signal electrodes while avoiding contact between the dielectric-covered actuation electrodes, dielectric charging appears to be tolerable. By simultaneously measuring the conductance across the signal electrodes and the capacitance across the actuation electrodes, the conductance-force characteristic can be readily monitored and analyzed. For the present switches, the effect of polarization charge appears to be negligible, and dielectric charging is significant only after dielectric contact is made and space charge is injected.
Keywords :
electrical conductivity; electrostatic actuators; microswitches; ohmic contacts; CMOS interconnect; MEMS ohmic switches; air gaps; capacitance; conductance; dielectric charging; electrostatic actuator; metal-metal contact; polarization charge; space charge; Air gaps; CMOS process; Dielectrics; Electrodes; Manufacturing processes; Micromechanical devices; Microswitches; Signal processing; Switches; Voltage control; Contact resistance; MEMS; dielectric films; microelectromechanical devices; microwave switches;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2008.2002539
Filename :
4700834
Link To Document :
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