Title :
Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K
Author :
Ling, Hong-Shi ; Wang, Shiang-Yu ; Lee, Chien-Ping ; Lo, Ming-Cheng
Author_Institution :
Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
We demonstrate the high-temperature operation of confinement enhanced dots-in-a-well (CE-DWELL) quantum-dot infrared photodetectors (QDIPs). The thin Al0.3Ga0.7As barrier layer added above the InAs QDs greatly improve the lateral confinement of QD states in the In0.15Ga0.85As DWELL structure and the device performance. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature, and long-wavelength detection at the same time.
Keywords :
III-V semiconductors; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; semiconductor quantum wells; Al0.3Ga0.7As; In0.15Ga0.85As; barrier layer; confinement enhanced dots-in-well quantum-dot infrared photodetectors; high-temperature operation; lateral confinement; long-wavelength detection; operating temperature; quantum efficiency; Infrared detectors; photodetectors; quantum dots (QDs); quantum effect semiconductor devices;
Journal_Title :
Photonics Technology Letters, IEEE
Conference_Location :
12/9/2008 12:00:00 AM
DOI :
10.1109/LPT.2008.2009130
