• DocumentCode
    3559375
  • Title

    Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K

  • Author

    Ling, Hong-Shi ; Wang, Shiang-Yu ; Lee, Chien-Ping ; Lo, Ming-Cheng

  • Author_Institution
    Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu
  • Volume
    21
  • Issue
    2
  • fYear
    2009
  • Firstpage
    118
  • Lastpage
    120
  • Abstract
    We demonstrate the high-temperature operation of confinement enhanced dots-in-a-well (CE-DWELL) quantum-dot infrared photodetectors (QDIPs). The thin Al0.3Ga0.7As barrier layer added above the InAs QDs greatly improve the lateral confinement of QD states in the In0.15Ga0.85As DWELL structure and the device performance. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature, and long-wavelength detection at the same time.
  • Keywords
    III-V semiconductors; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; semiconductor quantum wells; Al0.3Ga0.7As; In0.15Ga0.85As; barrier layer; confinement enhanced dots-in-well quantum-dot infrared photodetectors; high-temperature operation; lateral confinement; long-wavelength detection; operating temperature; quantum efficiency; Infrared detectors; photodetectors; quantum dots (QDs); quantum effect semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • Conference_Location
    12/9/2008 12:00:00 AM
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2008.2009130
  • Filename
    4703255
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3559375