InGaAs/GaAs/InGaP quantum well laser with etched mirrors obtained by electron cyclotron resonance plasma

Author

Mestanza, S.N.M. ; Von Zuben, A.A. ; Frateschi, N.C. ; Bettini, J. ; de Carvalho, M.M.G.

Author_Institution

UNICAMP, Campinas, Brazil

Volume

1

fYear

1999

fDate

1999

Firstpage

13

Abstract

InGaAs/GaAs quantum well lasers with InGaP cladding layer were grown by chemical beam epitaxy (CBE). Low transparency current of J_tr=150 A/cm² and optical loss of 50 cm^-1 were obtained for broad-area lasers with conventional cleaved facets. Lasers with mirrors obtained by electron cyclotron resonance plasma (ECR) etching were fabricated. Threshold current of 200 and 325 mA were obtained for lasers 40 μm wide and cavity length of 300 and 200 μm, respectively

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; laser mirrors; microcavity lasers; quantum well lasers; sputter etching; ECR plasma etching; InGaAs-GaAs-InGaP; InGaAs/GaAs/InGaP quantum well laser; broad-area laser; chemical beam epitaxy; cladding layer; cleaved facet; mirror; optical loss; threshold current; transparency current; Chemical lasers; Electron optics; Epitaxial growth; Etching; Gallium arsenide; Indium gallium arsenide; Laser beams; Mirrors; Molecular beam epitaxial growth; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-5807-4

Type

conf

DOI

10.1109/IMOC.1999.867028

Filename

867028