Title :
Wavelength-selective and tunable optical intensity modulator module for ultrahigh frequency applications: design and simulation results
Author :
Silva, M. T Camargo
Author_Institution :
Barretos Inst. of Technol., Brazil
Abstract :
The design and simulation results of an InGaAs/InP coupled asymmetric quantum well (CAQW) wavelength-selective, tunable and chirp-free optical intensity modulator module for applications in high-speed wavelength division multiplexing (WDM) communication systems are presented. The module is composed of three modulators integrated in tandem and is based on a distributed Bragg reflector (DBR) structure. Bandwidth in excess of 250 GHz at 1.6 V for 12 dB of extinction ratio and 3.0 dB of insertion loss is predicted for a 750 m long module. Optical tuning of 6 A at 1.6 V and tuning speed of 26 GHz is also anticipated
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; intensity modulation; optical communication equipment; optical tuning; quantum well devices; wavelength division multiplexing; 1.6 V; 250 GHz; 3.0 dB; InGaAs-InP; InGaAs/InP coupled asymmetric quantum well; bandwidth; design; distributed Bragg reflector; extinction ratio; high-speed communication system; insertion loss; optical intensity modulator; optical tuning; simulation; ultrahigh frequency device; wavelength division multiplexing; wavelength selectivity; Chirp modulation; Distributed Bragg reflectors; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Intensity modulation; Optical design; Optical modulation; Optical tuning; Wavelength division multiplexing;
Conference_Titel :
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-5807-4
DOI :
10.1109/IMOC.1999.867075
